smd type smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK3641 features low on-state resistance r ds(on)1 =14 m max. (v gs =10v,i d =18a) r ds(on)2 =25 m max. (v gs =4.5v,i d =15a) low c iss :c iss = 930 pf typ. absolute maximum ratings ta = 25 parameter symbol rating unit draintosourcevoltage v dss 30 v gate to source voltage v gss 20 v i d 36 a i dp * 140 a power dissipation t c =25 29 t a =25 1.0 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =30v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate cut off voltage v gs(off) v ds =10v,i d =1ma 1.5 2.5 v forward transfer admittance y fs v ds =10v,i d =18a 5.5 11 s r ds(on)1 v gs =10v,i d =18a 11 14 m r ds(on)2 v gs =4.5v,i d =15a 17 25 m input capacitance c iss 930 pf output capacitance c oss 250 pf reverse transfer capacitance c rss 160 pf turn-on delay time t on 9.4 ns rise time t r 8.6 ns turn-off delay time t off 34 ns fall time tf 11 ns total gate charge q g 22 nc gate to source charge q gs 3.6 nc gate to drain charge q gd 7.4 nc body diode forward voltage note v f(s-d) i f =36a,v gs =0v 1.0 v reverse recovery time t rr i f =36a,v gs =0v 24 ns reverse recovery charge q rr d i /d t = 100 a/ s 15 nc v dd = 24v v gs =10v i d =36a v ds =10v,v gs =0,f=1mhz i d =18a,v gs(on) =15v,r g =10 ,v dd =10v drain to source on-state resistance smd type ic smd type transistors smd type smd type smd type smd type smd type ic smd type smd type ic smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
|
